Synthesizing ultrathin Te crystal with uniform orientation is important to its large‐scale device applications, but that remains a great challenge. Tellurium (Te), an elemental van der Waals semiconductor, has intriguing anisotropic physical properties owing to its inherent quais‐1D crystal structure. Here, the authors utilize a topological semiconductor to engineer valley polarization transistors with long lifetimes and demonstrate low-power neuromorphic functionality at room temperature. Valleytronic devices employ the electronic valley degree of freedom to realize potential low-power electronic applications.
With ultralow power consumption (~fW valley contribution), we enable the inferring process of artificial neural networks, exhibiting potential for applications in low-power neuromorphic computing. Moreover, we demonstrate an ion insertion/extraction device structure that enables 32 non-volatile memory states with high linearity and symmetry in the Te valley transistor. We observe valley-polarized diffusion lengths of more than 7 μm and fabricate valley transistors with an ON/OFF ratio of 105 at room temperature. This is achieved by electrostatic manipulation of the non-trivial band topology of the Weyl semiconductor tellurium (Te).
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Here, we demonstrate room-temperature valley transistors that operate by generating free carrier valley polarization with a long lifetime. However, valley-polarized excitons usually have short pico-second lifetimes, which limits the room-temperature applicability of valleytronic devices. Valley pseudospin is an electronic degree of freedom that promises highly efficient information processing applications. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low-dimensional Te and explore its underlying application in monolithic integration.
Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm2 V-1 s-1 and 1.5×105, respectively. The bending of TRs which have not been reported is induced by grain boundary. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length the epitaxy relationship between direction of Te and direction of mica facilitates the oriented growth and the expansion of their width. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60°on mica substrates by physical vapor deposition strategy. As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility, excellent ambient stability and topological states.
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